Abstract
Co-doped–ZnO thin films with the hexagonal zincite structure (wurtzite) have been synthesized on (0 0 6) Al 2O 3 sapphire substrate by pulsed laser deposition. Properties of the synthesized films are studied and the relation of the properties to its structural is reported. Single phase and highly textured Co-doped–ZnO thin films are successfully grown at relatively low temperature, 100 °C. Only single zincite (0 0 2) phase is formed and no cobalt segregation is detected. The structural, magnetic, electrical and optical properties of the deposited films were analyzed. Magnetic ordering was observed for all the films and the magnitude of the ordering is strongly dependent on the substrate temperature during deposition. Semiconductors properties of the carrier concentration and resistivity were also studied by Hall effect measurement. Both films deposited at 100 °C and 600 °C still preserve its semiconductor electron carrier density at the range of 10 21 cm −3. However, the resistivity increased with the increasing deposition temperature.
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