Abstract
Highly oriented Co-doped rutile TiO2 thin film on silicon has been achieved by using a TiN buffer layer. The direct deposition of TiO2:Co film on TiN–Si yields (110)-oriented film structure having two equivalent structural domains which are perpendicular to each other. Interestingly, no ferromagnetism is observed in this film structure down to 10K, the reason for which is attributed to the formation of cobalt silicide in the silicon. On the other hand, when the TiO2:Co film is deposited on TiO2, formed by in situ oxidation of TiN–Si, cobalt appears highly mobile leading to segregation at the TiO2–Si interface along with the formation of cobalt clusters in the TiO2:Co film region. This is responsible for the ferromagnetism in this case.
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