Abstract
Electrical and structural properties of coevaporated Fe–Si thin alloy films as a function of annealing temperature have been studied by in situ electrical resistivity measurements and structural analysis including 2 MeV 4He+ ion backscattering, x-ray diffraction, scanning microscopy, and roughness measurements. In the as-deposited state the coevaporated alloy film was amorphous. Upon annealing a sharp increase in resistivity occurred near 400 °C and the increase was determined to be amorphous-to-crystalline β–FeSi2 phase transformation. In cooling, the resistivity increased monotonically with decreasing temperature. Surface roughness is well pronounced for films heat treated at temperatures higher than 700 °C and is due to the difference in thermal expansion coefficients of substrate and β–FeSi2. The crystalline β–FeSi2 was determined to be a semiconductor with an energy gap of 0.80 eV. It is p-type, having a hole concentration and a Hall mobility of 1.4 × 1018 cm−3 and 4 cm2/V s, respectively, at room temperature. The kinetics of the transformation was determined by isothermal heat treatment over the temperature range of 362 °C to 390 °C, and an activation energy of 2.3 eV was measured. The nucleation and growth kinetics in the crystallization process show a change in the power of time dependence from 2.1 to 3.4.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
