Abstract
High resolution STEM analysis of grain boundary segregation of arsenic in CVD grown polysilicon has shown that there is substantial equilibrium segregation after annealing at temperatures between 700 and 1000 C. The variation of extent of segregation with temperature allows calculation of the average binding energy of arsenic atoms to silicon grain boundaries (0.65eV/atom) and the average saturation concentration in the boundaries (12at%). 2 possible segregation sites are discussed with emphasis on the electrical effects of segregation to them.
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