Abstract
In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high- and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 °C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of . The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130 mV/dec, and a low off-state current of 2.4 × 10−14 A/µm at a low operating voltage of 4 V.
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