Abstract
Amorphous SiO2 (a-SiO2) layers were prepared using a thermal oxidation method. The SiO2 layers were nitrided at a temperature Tn between 450 and 650°C utilizing a plasma generation system, in which the layers before the nitridation were simultaneously grown on two different n-type crystalline Si substrates, one having a high resistivity for electron-spin resonance (ESR) and Fourier transform infrared absorption measurements and another having a low resistivity for current–voltage (I–V) measurement. We found the breakdown strength, estimated based on the I–V characteristics, increased with increasing Tn until 550°C, but the annealing at a further high Tn caused also a decrease in the breakdown strength. We found a strong correlation between the changes in the I–V characteristics and those in the bonding properties, and this correlation was also discussed in connection with the change in the ESR properties for the a-SiOxNy layers. Furthermore, incorporation of N atoms into SiO2 layers at Tn=550°C was suggested to improve the structural properties and the electrical properties.
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