Abstract
The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730–742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn–Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.
Highlights
The negatively charged silicon-vacancy center (SiV center) has received growing interest in the fields of quantum communication and quantum information due to its favorable spectral properties and optically accessible spin states [1,2,3,4]
Discussion of ZPL strain shift To provide a theoretical interpretation, the ZPL center wavelength shift is investigated in further detail and compared to results from density functional theory (DFT) calculations: zooming in to group V (figure 3(b)) it becomes clear that only six of the measured data points in group V are situated at a shorter center wavelength than the point attributed to an ideal SiV center in unstrained bulk material, the shortest wavelength ZPL being situated at 729.9 nm
In this work we report on a strongly inhomogeneous distribution of SiV center spectra in nanodiamonds produced by wet milling from polycrystalline diamond films
Summary
The negatively charged silicon-vacancy center (SiV center) has received growing interest in the fields of quantum communication and quantum information due to its favorable spectral properties and optically accessible spin states [1,2,3,4]. Examples include applications as fluorescence markers [11, 12] or the implementation of SiV centers in photonic structures such as microcavities [13, 14] or optical antennas [15, 16]. In light of such applications, nanodiamonds hosting color centers provide a significant advantage: Suitable SiV centers can be spectroscopically preselected according to desired properties and can be relocated to be used in the target structure using pick-and-place techniques [17]. Previous research demonstrated the production of nanodiamonds including SiV centers produced by chemical vapor deposition (CVD) [18], Sample name
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