Abstract
We fabricated a novel piezoresistive cantilever that integrates a superconductor–semiconductor–superconductor (S–Sm–S) junction. The cantilever was processed from an InAs/AlGaSb heterostructure and a submicron-size niobium gap was patterned to form a Nb–InAs–Nb junction, at which the deflection of the cantilever can be detected as resistance change, i.e., piezoresistance. The resulting piezoresistance at ∼2 K strongly depends on the bias current, and we confirmed that the piezoresistance is enhanced by two orders of magnitude at the critical current, where transition between superconducting state and normal state occurs in the S–Sm–S junction. This indicates that S–Sm–S junctions can be applied for highly sensitive displacement and force sensors.
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