Abstract
Silicon nanowires (SiNWs) layer was obtained by one-step metal-assisted chemical etching method. In order to improve the optical properties of SiNWs, we deposited poly(3-hexylthiophene) (P3HT) polymer on its surface. P3HT polymer has been deposited by electroless deposition method. The formation of aligned nanowires as well as the presence of the polymer on SiNWs layer has been shown from scanning electron microscopy (SEM) analysis. Raman and Fourier Transformed Infra-Red (FTIR) spectroscopies reveal the formation of new bonds on the nanowires surface thus showing a chemical reaction between silicon and P3HT molecules. The optical properties of the elaborate samples are studied by photoluminescence spectroscopy (PL). The integrated PL intensity of SiNW–P3HT sample has been achieved enhancement of 16 orders relative to that emitted from the normal SiNWs sample. The emission domain of the nanowires is practically in the same range as that of P3HT. The PL intensity increase is due to the luminescent centers of P3HT molecules as well as the passivation of silicon nanowires surface.
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