Abstract
This study found “stress-induced magnetization” for epitaxial ferrite films with spinel structure. We grew (111)- and (001)-epitaxial Ni0.17Zn0.23Fe2.60O4(NZF) films on CeO2∕Y0.15Zr0.85O1.93(YSZ)∕Si(001) and oxide single-crystal substrates, respectively. There is a window of lattice mismatch (between 0 and 6.5%) to achieve bulk saturation magnetization (Ms). An NZF film grown on CeO2∕YSZ∕∕Si(001) showed tensile stress, but that stress was relaxed by introducing a ZnCo2O4(ZC) buffer layer. NZF films grown on SrTiO3(ST)(001) and (La,Sr)(Al,Ta)O3(LSAT)(001) had compressive stress, which was enhanced by introducing a ZC buffer layer. In both cases, bulk Ms was achieved by introducing the ZC buffer layer. This similarity suggests that magnetization can be controlled by the stress.
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