Stress and strain analysis of Si-based III – V template fabricated by ion-slicing**Project supported by the National Key Research and Development Program of China (Grant No. 2017YFE0131300),the National Natural Science Foundation of China (Grant Nos. U1732268, 61874128, 11622545, 61851406, 11705262, and 61804157), the Frontier Science Key Program of the Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC032), the Chinese–Austrian Cooperative Research

Abstract

Strain and stress were simulated using finite element method (FEM) for three III–V-on-Insulator (III–VOI) structures, i.e., InP/SiO2/Si, InP/Al2O3/SiO2/Si, and GaAs/Al2O3/SiO2/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al2O3 over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.