Abstract
Blended films of insulating polymer-ferroelectrics with a dilute proportion of polymer semiconductors in a device structure exhibit memristor features. High current magnitudes during ON and OFF states of memory operation are critical when these devices are scaled down to nano dimensions. However, current in these devices is restricted by a limited proportion of low-mobility semiconducting transport channels bridging the top and bottom electrodes within the insulating ferroelectric-polymer matrix. We introduce electric field-assisted thermal annealing treatment during the blend film formation of memristors to overcome current limitations. This strategy enables improvement in the bridging fraction and the effective charge carrier mobility of the semiconducting regions. We present these studies for PVDF-TrFE: PFO and PVDF-TrFE: P3HT model systems.
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