Abstract
Design, fabrication, and operation of strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure (BH) lasers with nonabsorbing mirrors fabricated by selective-area epitaxy (SAE) are presented. The SAE-BH lasers with nonabsorbing mirrors operate at powers up to approximately 325 mW/facet (4 mu m wide output aperture), which is a >40% increase over conventional SAE-BH lasers.
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