Strained InGaAs/GaAs quantum wells with a 1.3 µm bandedge at room temperature

Abstract

AbstractThe fabrication of long wavelength opto-electronic devices on GaAs substrates is an attractive method for the monolithic integration of optical and electronic devices on a single chip for applications in telecommunications. InGaAs strained layer quantum wells provide one way of engineering the bandgap needed for 1.3 µm devices at room temperature. We have grown and characterized quantum well structures with bandgap of .96 eV using a novel technique, called spatial strain separation, to avoid the stringent limitation of critical thickness which limits the achievable bandgap in this material system. Moreover we have studied the stability of such structures with respect to thermal processing, including oven and rapid thermal annealing. We have observed no degradation of the quantum wells after thermal annealing as judged from the PL spectra shown here.