Abstract
Strained InAs single quantum wells (SQWs) embedded in a Ga0.47In0.53As matrix are grown on InP substrates by a modified solid-source molecular beam epitaxy. The series of samples with well between 2 and 11 monolayers (ML) is characterized by high-resolution double crystal x-ray diffraction and photoluminescence (PL) spectroscopy. The excellent agreement obtained between simulated and experimental x-ray rocking curves demonstrates the coherence of the samples. A PL linewidth as narrow as 7 meV is measured at 6 K for the SQW with a thickness of 5 ML. This is the best result reported so far for InAs QWs grown on InP. In addition, luminescence is observed up to room temperature for all samples.
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