Abstract
The influence of compressive strain on the deformation of GaAs nanoparticles embedded in different host matrices is investigated. The simulation results indicate that it can be easier to deform GaAs nanoparticles grown in an Al2O3 film than those in an SiO2 film. The deformation induced by the applied compressive strain has significant influence on the shape, size and microstructure of GaAs nanoparticles. Most significantly, these simulated results have a good agreement with HRTEM experimental results.
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