Abstract
We studied the heterojunction band offsets (HBOs) at highly-strained InAs/GaAs(100) heterointerfaces with an emphasis on the effects of strain. The core level energy differences between In 4d and Ga 3d levels in InAs/GaAs heterostructures are measured by in-situ X-ray photoelectron spectroscopy and found to be only slightly dependent on the substrate lattice constant. The effect of strain on the core level energies relative to the valence band maxima (VBM) was theoretically taken into account. The determined valence band offset ΔE v [≡(InAs)− E v (GaAs)] is 0.53 eV on GaAs substrates and −0.16 eV on InAs substrates, clearly indicating a large effect of strain on the valence band offset (∼0.7 eV) in this system.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
