Abstract
Anisotropic diffusion of Ge induced by nonuniform strain in SiGe/Si interfaces in the range of 700–850 °C is directly observed with medium-energy ion-scattering spectroscopy through its composition and strain profiles of atomic-layer depth resolution. For SiGe/Si interfaces with identical composition profiles but with different strain distributions, the anisotropic diffusion of Ge can be clearly correlated with the anisotropic relaxation of the nonuniform strain in the near-surface layer of several nm depth. The results suggest that atomic-scale strain control is critical to maintain abrupt SiGe/Si interfaces under thermal budget.
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