Abstract
Strain effects on the optical properties of compressively-strained InGaAs/InP multiple quantum wires (QWRs) are investigated as functions of the wire thickness along the x direction, Lx, by using a six-band strain-dependent k·p Hamiltonian. In the case of QWRs with the same initial strains, the transition energy decreases with increasing number of wire layers, and its rate of decrease is shown to increase with increasing Lx. On the other hand, in the case of QWRs with different initial strains, the transition energy slightly increases with increasing number of wire layers and its rate of increase is nearly independent of Lx. The z-polarized optical matrix element for QWRs with different initial strains is shown to be much larger than that for QWRs with the same initial strains, irrespective of Lx. This can be explained by the fact that the confinement of the wavefunction in the conduction band is enhanced due to the strain effect.
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