Abstract
Epitaxial LuFeO3(LFO) thin films were deposited on La0.5Sr0.5MnO3(LSMO)/LaAlO3(LAO) substrates by pulsed laser deposition method. The LFO thin film with a thickness of 100 nm exhibited tetragonally strained structure on the LSMO/LAO substrate, in which the film showed c/a ratio of 1.045 based on X-ray diffraction experiment. The LFO thin film had a remnant polarization of about 15.2 μC/cm2, which was higher than the previously reported values. By using piezoresponse force microscopy study, it was confirmed that the LFO thin films had mosaic ferroelectric domain structure and that their domain wall energy was estimated to be lower than that of PbTiO3 thin films.
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