Abstract
The deposition of heteroepitaxial thin films on single crystalline substrates by means of physical deposition methods is commonly accompanied by mechanical strain due to lattice mismatch and defect generation. Here we present a detailed analysis of the influence of strain on the Mn solubility of Pr1−XCaXMnO3 thin films prepared by ion‐beam sputtering. Combining results from X‐ray diffraction, transmission electron microscopy and in situ hot‐stage stress measurements, we give strong evidence that large tensile strain during deposition limits the Mn solubility range of the Perovskite phase to near‐stoichiometric composition. Mn excess gives rise to MnOz precipitates and the precipitation seems to represent a stress relaxation path. With respect to size and density of the precipitates, the relaxation process can be affected by the choice of substrate and the deposition parameters, that is, the deposition temperature and the used sputter gas.
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