Abstract
Strain has valuable effects on the formation of the growth and the photo electronic properties of Ge/Si quantum dots (QDs), and it is important to understand the distribution of strain and the other properties of Ge/Si QDs theoretically. In this work, a method based on the Green’s function technique is used to solve elastic equations and the strain of different QDs shapes is calculated by a numerical algorithm. The strain of QDs which array in different density is analyzed and the strain of hemispherical QDs is compared with pyramidal QDs in calculations.
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