Strain and defect engineering in Si/Si 3N 4/Si by high temperature–pressure treatment

Abstract

Strain and defects in silicon with buried nitride layer, prepared by annealing of nitrogen implanted Czochralski grown Si (Cz Si:N) under enhanced hydrostatic pressure (HP), were investigated. To produce Cz Si:N, silicon was implanted with N 2 + (atomic doses 1 × 10 17 cm −2 and 1 × 10 18 cm −2, energy 140 keV). The samples were next treated in Ar atmosphere for 1–10 h at up to 1400 K under HP ≤ 1.4 GPa and investigated by mass spectrometry, photoluminescence, X-ray, electrical and microhardness methods. Concentration profiles of nitrogen and of accumulated oxygen in Cz Si:N treated at ≤920 K were not affected markedly by HP . The strained nitride layers were formed in effect of the treatment at ≥1070 K. The treatments at ≥1270 K resulted in formation of the well-defined layered structures. Applied at 1400 K, HP assisted in a creation of the defect-free Si/Si 3N 4/Si structures.