Abstract
Silicon-on-Insulator (SOI) wafers produced by the Zone-Melting-Recrystallization (ZMR) method were evaluated to determine the level of built-in strain. Micromechanical strain measurement structures were produced by surface micromachining the thin film silicon epitaxial layer. A variety of test structures and a new tensile strain measurement device were used to determine the level of strain in the material. Results indicated that the maximum strain in the ZMR material is less than 2/spl times/10/sup -4/ and that there is a significant orientation dependence. >
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