Abstract
We have investigated the high quality p-type Cu2O thin films produced by the post vacuum annealing process of Cu2O thin films deposited on glass substrates at room temperature by facing target sputtering. As-deposited stoichiometric films show the high Cu2O (111)-axis orientation with the minimum value of electrical resistivity of 17Ωcm. Furthermore, the XRD peaks intensities continuously decrease around the stoichiometric 2θ value of 36.4° with increasing the O2 partial pressure. With the vacuum annealing at 550°C with optimized oxygen ambient, the high quality p-type Cu2O thin film could be obtained. The highest value of Hall mobility μH of 61cm2/Vs is obtained for a vacuum annealed stoichiometric p-type Cu2O thin film. Such high value of μH in the described stoichiometric p-type Cu2O thin film is believed to be due to the minimized oxygen vacancies induced by optimized vacuum annealing of a stoichiometric as-deposited Cu2O thin film.
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