Abstract
The market demands for higher pin counts and more chips functionality pose challenges in conventional wire bonding. However, insulated Cu wire technology enables fine and ultra-fine pitch wire bonding as the insulator coating on the bare wire prevents wires shorting problem. This paper presents the study on the stitch-bonding process optimisation and its challenges for the insulated Cu wire with a diameter of 20 µm. Insulated Cu stitch bond samples show 37% lower stitch pull strength than that of bare Cu. The cross-sectioned insulated Cu stitch bond shows that there is an insulation residue between the Cu stitch and the Au-plated substrate, potentially resulting in lower stitch pull performance. However, after isothermal aging at 225°C for up to 78 hours, the stitch pull results for insulated Cu wire passed the industry reliability standard, without any lifted bond. A detailed comparison study was performed for the insulated Cu and the bare Cu stitch bonding.
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