Abstract
Continuous single crystal (001)PbTiO<SUB>3</SUB> thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO<SUB>3</SUB> substrate with miscut angle of 1.7 degrees. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO<SUB>3</SUB> thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.
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