Abstract
By using finite area metalorganic vapor phase epitaxy (FAE), atomically step-free surfaces and interfaces are obtained. Their flatness is confirmed by ex situ atomic force microscopy (AFM) and low-temperature spatially resolved photoluminescence (SR-PL) measurement. We suggest a step elimination principle by FAE, where two-dimensional (2D) nucleation is suppressed on a facet due to surface migration or desorption. We conclude that, by utilizing desorption, a step-free surface of any size can be formed as long as the size is finite. To demonstrate this, we formed an extraordinarily wide step-free GaAs(1 1 1)B surface 100 μm in diameter. Surface stoichiometry control based on in situ monitoring of surface photo-absorption (SPA) is indispensable for flatness control. We investigate the feasibility of FAE with respect to growth methods, materials, and thickness by forming GaAs/Al 0.3Ga 0.7As quantum well on patterned GaAs(1 1 1)B substrate. We also show the potential of FAE of InP and GaN.
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