Abstract
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which normally appear in a conventional TFET, and realize a sudden switching to the on-state arising from a short BTBT path. Our simulations demonstrate that the TG-TFET can achieve an extremely steep SS, less than 10 mV/decade, in the double-gated Si-channel configuration. The TG structure also improves the ratio ION/IOFF to a value higher than that of ideal MOSFETs in the operation voltage range up to 0.35 V. The mechanism of steep switching is based on a simple modification of the gate electrostatic control; therefore, in addition to the demonstrated TFETs, the TG structure is universally applicable to many types of TFETs.
Highlights
With the rapid growth in global data traffic, the development of low-power large-scale integrated circuits (LSIs) has become a fundamental necessity
Because the standby power associated with the off-state current becomes significant in low-voltage operation, the building blocks for such LSIs are required to have a steep subthreshold swing (SS)
We propose a novel type of tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which notably improves the average SS
Summary
With the rapid growth in global data traffic, the development of low-power large-scale integrated circuits (LSIs) has become a fundamental necessity. Hidehiro Asai,a Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, and Koichi Fukuda Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan (Received 11 June 2018; accepted 23 August 2018; published online 5 September 2018)
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