Status and Trend of SiC Power Semiconductor Packaging

Abstract

With the superior electrical and thermal properties of wide band gap materials, Silicon Carbide (SiC) devices are capable of working at high power density, high temperature, high frequency, high voltage and high efficiency. Although the substantial investigation on SiC material, device and packaging technologies have been done, there are a series of problems needed to be solved, such as the material quality, cost and packaging for high power density and high temperature. In this work, the status and trend of SiC power device packaging are addressed. A brief review of hybrid and full SiC power module in terms of market prospect, module structure, material and technologies are discussed. Then, the performance and reliability of Si and SiC modules are compared, including the thermal resistance, power loss and power cycling capability etc. finally, the packaging trend of SiC module for high thermal performance, high temperature and high reliability are proposed.