Abstract
The dislocation motion induced by external stress is considered using the model of individual atom migration within the dislocation core. Equations are derived which permit calculation of dislocation velocities in perfect crystals from the value of the energy barrier which atoms must overcome. Using the known average distance between point obstacles (the regions of dislocation pinning), analogous calculations are possible for real crystals. The velocities calculated agree with the experimental results available for semiconducting and alkali halide crystals. [Russian Text Ignored].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
