Abstract
Static frequency dividers have been fabricated in a selective epitaxial bipolar technology using 0.8 mu m lithography. The measured maximum frequency of 25 GHz is the highest value reported for static silicon dividers. Moreover, a 16 GHz low-power version is presented which consumes only 8 mW in the first stage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
