Abstract
We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements onvertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- andtenfold stacked quantum dot structures grown by low-pressure metal–organic vapour phaseepitaxy. The XSTM images reveal that the quantum dots are generally verticallywell aligned, and have a truncated pyramidal shape in agreement with similarstudies of InAs dots in GaAs. STM images displaying atomic resolution indicatethat the dots have a pure InAs stoichiometry, with intermixing only occurring inthe top and bottom dot rows. Further, we have investigated various anomalies(considered as defects) as observed in the quantum dot stacks. The origins of theseanomalies are discussed and compared to theoretical predictions available so far.
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