Abstract
A stable dynamic avalanche at a maximum power density of about 2.4 MW/cm2 was measured in small areas of 3.3 kV Si power diodes, using an optical measurement technique, and very good dynamic ruggedness was verified in a conventional turn-off measurement. Device simulations of a diode with a shallow n+ emitter indicate that impact ionization at the nn+ junction can result in negative differential resistance (NDR) and current filamentation, whereas a deep n+ emitter in the experimentally studied diode suppresses NDR. It is, therefore, proposed that the deep n+ emitter is important for the stable dynamic avalanche.
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