Abstract
In this article, we reported the synthesis method of stable CsPbX3@SiO2 quantum dots using cesium acetate instead of cesium carbonate. The results showed that CsPbX3@SiO2 presents good crystallinity and excellent luminescence properties. The coating layer of SiO2 on the CsPbX3 quantum dots surface blocks the air and water contact and suppresses anion exchange between the quantum dots, which dramatically enhances the stability. White light-emitting diode devices are manufactured by integrating the green CsPbBr3@SiO2 quantum dots and red CsPbBr1 I2@SiO2 quantum dots on the blue GaN chips. The devices show stable white light emission with Commission Internationale de L'Eclairage color coordinates (0.3511, 0.3437), and the white light intensity keeps unchanged after continuously working for 16 hours. The results indicate that CsPbX3@SiO2 quantum dots can be an ideal down-conversion fluorescent material for white light-emitting diode devices.
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