Abstract
Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with X-Rays diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
