Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity

Abstract

A new nonvolatile memory based on intersubband transitions and electron accumulation in GaN/AlN resonant tunneling diodes (RTDs) was investigated toward the realization of a high-speed nonvolatile random-access memory (RAM) operating on picosecond time scales. It was shown that the endurance of write/erase memory operations can be enhanced by reducing the structural inhomogeneity of GaN/AlN RTDs. Neither mechanical damage nor significant degradation of current–voltage characteristics was observed after repeated write/erase memory operations using GaN/AlN RTDs with small degrees of inhomogeneity. High-endurance nonvolatile RAMs for computing systems are expected to be realized by further improvement in the crystal quality of GaN/AlN RTDs.