Abstract
In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ac</inf> =3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.
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