Abstract
ABSTRACTAnalog circuits using amorphous silicon thin film transistors offer significant advantages for in situ signal processing in large-area optical and x-ray imagers. However such circuits are susceptible to gate-bias-induced shifts in the threshold voltages of the constituent transistors. In this work, the change of threshold voltage for devices undergoing cycles of stress, relaxation and reverse bias is measured in order to determine the feasibility of resetting the threshold voltage electrically. It is concluded that, although the reverse bias does assist the recovery of the threshold voltage, the process is still not sufficiently rapid. An analog amplifier circuit is then described which uses negative feedback to achieve a gain that is stable to within 6% over a period of 8 hours.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
