Abstract
The kinetics of phase redistribution in the (Mo, W)Si2 ― Nb system at 1500-1800°C was investigated. The kinetic parameters for growth of the lower silicides (Mo, W, Nb) 5Si3 + Nb5Si3 and decrease in the layer thickness of the higher silicide (Mo, W)Si2 as function of the oxidation temperature were determined. It was established that the stability of the multiphase and multicomponent system was more than twice that of the system MoSi2 ― Nb, and 15-18 times that of MoSi2 ― Mo.
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