Abstract
The kinetics of phase redistribution in the (Mo, W)Si2 ― Nb system at 1500-1800°C was investigated. The kinetic parameters for growth of the lower silicides (Mo, W, Nb) 5Si3 + Nb5Si3 and decrease in the layer thickness of the higher silicide (Mo, W)Si2 as function of the oxidation temperature were determined. It was established that the stability of the multiphase and multicomponent system was more than twice that of the system MoSi2 ― Nb, and 15-18 times that of MoSi2 ― Mo.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
