Abstract
The sputtering yield of neutral Ti atoms from Ti and TiC samples for D+ and He+ irradiation has been measured by means of laser induced fuorescence (LIF). The effect of oxygen exposure has been investigated at temperatures ranging from RT to 1400 K. The results are calibrated to the total yield for Ti sputtering obtained with the weight loss method. The Ti sputtering yield starts to decrease with oxygen exposure at lower oxygen fluxes under light ion bombardment, compared to the Ar+ results of Dullni [Appl. Phys. A38 (1985) 131]. This decrease occurs at an oxygen coverage estimated to be about 0.4–0.8 monolayers for light ion bombardment, in comparison with 0.3–0.5 monolayers for Ar+ bombardment. The Ti sputtering yield increases with temperature at around 800 K to reach the same plateau, independent of the oxygen partial pressure. This increase is explained assuming that oxygen adsorbed on the Ti surface from the residual gas migrates below the Ti surface above 800 K. At a temperature of about 1200 K a new increase in the laser induced fluorescence signal is observed in case of the pure Ti samples. This is understood in terms of Ti sublimation. No Ti sublimation from the TiC samples is observed in the same temperature range.
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