Abstract
Binary amorphous copper-titanium alloys of compositions 44, 53, 65 and 69 at% copper were sputtered with 2 keV Ar + ions. The surface concentrations were then determined by Auger electron spectroscopy and ion scattering spectrometry. It was found that Cu is sputtered preferentially as it segregates to the surface. A recently developed model for radiation-enhanced surface segregation was used to fit the experimental data. The segregation energy decreases with increasing Cu concentration from 2500 Jmol −1 to zero for the highest concentration, in qualitative agreement with several predictions on the segregating species in the alloy. The radiation-enhanced diffusion coefficients have values in the range (2–3) × 10 −20 m 2 s . From the concentration profiles the depth of the altered layer was estimated to about 4 nm which coincides well with the range of the defect distribution caused by the argon ions according to TRIM calculations. A Cu Ti sputtering ratio of 6 was needed for the best possible fit of the results.
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