Abstract
Abstract Atomistic (binary-collision) simulation is used to study the sputter yield from rippled surfaces in a wide range of ion incidence angles. Most simulations refer to amorphous carbon bombarded with 7 keV Ga ions, and sinusoidal ripple morphology is assumed. Results are compared with the analytical predictions and Monte Carlo simulations based on continuum models of sputtering from sine- and ridge-shaped surfaces. Both atomistic and Monte Carlo simulations do not confirm a sharp increase in the sputter yield with increasing the ripple amplitude predicted theoretically (Makeev and Barabasi, 2004). Significant differences between the results are also observed in the yield dependence on the angle of incidence.
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