Abstract
Beta iron disilicide (β-FeSi2) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. β-FeSi2 film has been obtained by ion beam sputter deposition (IBSD) on Si(100) substrates that are pre-treated by sputter etching by Ne+. In the present study, the sputter etching effect on the substrate was investigated through the cross-sectional observation of transmission electron microscopy (TEM) in order to find the conditions for fabricating uniform β-FeSi2 films which have high orientation and form a smooth interface with the substrate. Nanostructural changes of the deposited film and the interface were observed as a function of sputter Ne+ energy and fluence. It was found from the observed crystal structure of the films and interface that the effect of the surface pre-treatment significantly changes with the ion energy and fluence. By 1keV irradiation at the fluence of 3×1016ions/cm2, β-FeSi2 film was epitaxially grown on Si(100) substrate with an atomically smooth interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
