Abstract
AbstractIn this study, we report on the use of a two‐stage annealing treatment at 1100°C coupled to reactive Spark Plasma Sintering to reduce the synthesis temperature of InGaO3(ZnO)m (m = 1 to 9) dense polycrystalline pellets below 1200°C, in order to suppress the volatilization of ZnO and get a better control of the crystalline quality of the pellets. We show that using this treatment, dense single‐phase pellets can be prepared with randomly oriented grains. Besides, we evidence a monotonic evolution of the band gap in the series from 3.27 eV in InGaO3(ZnO) to 3.02 eV in InGaO3(ZnO)9, as well as a non‐monotonic evolution of the lattice thermal conductivity that reaches a minimum for InGaO3(ZnO)3, lower than 2 W m−1 K−1 above 350°C. Last, we propose a procedure for the high‐temperature measurement of the thermal diffusivity of oxides by the laser flash method to avoid possible reactions between the measured material and the graphite spray.
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