Abstract
Peak splitting in the low temperature photoluminescence (PL) spectra of c-plane InGaN/GaN single quantum well samples was observed. For the k∥c configuration, the splitting peaks show a variation in relative intensity as the excitation power is tuned. For the k⊥c configuration, a strong polarization dependence of the luminescence distribution and intensity was spotted. The PL spectra was analyzed with a calculation model based on the k⋅p effective mass theory, and the splitting peaks were identified as free-exciton transitions between the conduction subband C1 and two groups of valence subbands, the {HH1,LH1} and the {HH2,LH2,CH1}, respectively.
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