Abstract
Spin-selective transport of optically excited polarized electrons through Fe/GaAs(100) and ${\mathrm{F}\mathrm{e}/\mathrm{A}\mathrm{l}\mathrm{O}}_{x}/\mathrm{GaAs}(100)$ interfaces is reported. A visible enhancement in the spin selectivity is observed in the ${\mathrm{F}\mathrm{e}/\mathrm{A}\mathrm{l}\mathrm{O}}_{x}/\mathrm{GaAs}(100)$ structure at a forward bias of 0.04 V, while no such feature is seen in the Fe/GaAs(100) structure. The spin selectivity in the ${\mathrm{F}\mathrm{e}/\mathrm{A}\mathrm{l}\mathrm{O}}_{x}/\mathrm{GaAs}(100)$ structure has a maximum value which is a factor of 2 larger than that of the Fe/GaAs(100) structure at the same bias of 0.04 V. The effect can be understood in terms of the spin dependent tunneling of electrons through the oxide barrier in the ${\mathrm{F}\mathrm{e}/\mathrm{A}\mathrm{l}\mathrm{O}}_{x}/\mathrm{GaAs}(100)$ structure, while its clear bias dependence excludes magnetic circular dichroism as a possible mechanism.
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