Abstract
The dream of graphene modified to have a spin-polarized semiconducting band structure has remained elusive for over a decade. This study uses spin-polarized scanning tunneling microscopy to reveal that the strong interaction between graphene and Ni(111) substrate generates a large gap in graphene, and simultaneously leads to a relative shift of majority- and minority-spin bands. This band structure persists even at room temperature, which is promising for graphene-based spintronic information technologies.
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