Abstract
The electronic states of a hydrogenic donor impurity in GaAs∕GaAlAs quantum wells are investigated theoretically in the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling. The splits of electron energy levels are calculated. The results show that (1) the split energy of the excited state is larger than that of the ground state; (2) the split energy peak appears as the GaAs well width increases from zero; and (3) the maximum split energy reaches about 1.6meV. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.
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