Abstract
We present a theory of resonant tunneling via Zeeman split Landau levels in diluted magnetic semiconductor triple barrier heterostructures. In such a system, the tunneling current through two quasistationary discrete levels with high degeneracy exhibits sharp peaks as a function of bias. The spin fluctuations in the localized spin system produce, via the exchange interaction, additional peaks in the tunnel current. These peaks change with temperature in position and height. The results may provide an experimental tool to study the magnetic behaviour of thin layers by tunnel currents.
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